One-Step Passivation of Both Sulfur Vacancies and SiO<sub>2</sub> Interface Traps of MoS<sub>2</sub> Device
Byung-Wook Ahn, Yoonsok Kim, Meeree Kim, Hyang Mi Yu, Jaehun Ahn, Eunji Sim, Hyunjin Ji, Hamza Zad Gul, Keun‐Soo Kim, Kyuwook Ihm, Hyoyoung Lee, Eun Kyu Kim, Seong Chu Lim
Abstract
Transition metal dichalcogenides (TMDs) benefit electrical devices with spin–orbit coupling and valley- and topology-related properties. However, TMD-based devices suffer from traps arising from defect sites inside the channel and the gate oxide interface. Deactivating them requires independent treatments, because the origins are dissimilar. This study introduces a single treatment to passivate defects in a multilayer MoS 2 FET. By applying back-gate bias, protons from an H–TFSI droplet are injected into the MoS 2, penetrating deeply enough to reach the SiO 2 gate oxide. The characterizations employing low-temperature transport and deep-level transient spectroscopy (DLTS) studies reveal that the trap density of S vacancies in MoS 2 drops to the lowest detection level. The temperature-dependent mobility plot on the SiO 2 substrate resembles that of the h-BN substrate, implying that dangling bonds in SiO 2 are passivated. The carrier mobility on the SiO 2 substrate is enhanced by approximately 2200% after the injection.