Electrical characteristics and photodetection mechanism of TiO<sub>2</sub>/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction
Teng Zhan, Jianwen Sun, Tao Feng, Yulong Zhang, Binru Zhou, Banghong Zhang, Junxi Wang, P.M. Sarro, Guoqi Zhang, Zewen Liu, Xiaoyan Yi, Jinmin Li
Abstract
A novel type of Schottky junction-based heterostructure UV detector integrates a AlGaN/GaN 2DEG field-effect transistor and a Ti/AlGaN Schottky junction. SE, PF emission and FN tunneling mechanisms are observed when the device is working at different reverse bias voltages.
Topics & Concepts
Materials sciencePhotodetectionHeterojunctionOptoelectronicsSchottky diodeSchottky barrierUltravioletPhotodetectorDetectorMetal–semiconductor junctionQuantum tunnellingTransistorVoltageOpticsElectrical engineeringPhysicsEngineeringDiodeGa2O3 and related materialsGaN-based semiconductor devices and materialsPhotocathodes and Microchannel Plates