Configurable Resistive Response in BaTiO<sub>3</sub> Ferroelectric Memristors via Electron Beam Radiation
Alan Molinari, Ralf Witte, Krishna Kanth Neelisetty, Mohammad Saleh Gorji, Christian Kübel, Ingo von Münch, Franziska Wöhler, L. Hahn, Stefan Hengsbach, Klaus J. Bade, Horst Hahn, Robert Kruk
Abstract
Abstract Ferroelectric oxide memristors are currently in the highlights of a thriving area of research aiming at the development of nonvolatile, adaptive memories for applications in neuromorphic computing. However, to date a precise control of synapse‐like functionalities by adjusting the interplay between ferroelectric polarization and resistive switching processes is still an ongoing challenge. Here, it is shown that by means of controlled electron beam radiation, a prototypical ferroelectric film of BaTiO 3 can be turned into a memristor with multiple configurable resistance states. Ex situ and in situ analyses of current/voltage characteristics upon electron beam exposure confirm the quasi‐continuous variation of BaTiO 3 resistance up to two orders of magnitude under the typical experimental conditions employed in electron beam patterning and characterization techniques. These results demonstrate an unprecedented effective route to locally and scalably engineering multilevel ferroelectric memristors via application of moderate electron beam radiation.