Defect-engineered room temperature negative differential resistance in monolayer MoS<sub>2</sub> transistors
Wen-Hao Chang, Chun-I Lu, Tilo H. Yang, Shu‐Ting Yang, Kristan Bryan Simbulan, Chih‐Pin Lin, Shang‐Hsien Hsieh, Jyun‐Hong Chen, Kai‐Shin Li, Chia‐Hao Chen, Tuo‐Hung Hou, Ting‐Hua Lu, Yann‐Wen Lan
Abstract
Defect-engineered monolayer MoS 2 transistors with sulfur vacancies of ∼5 ± 0.5% behave the stable negative differential resistance effect at room temperature. The peak-to-valley ratio can be modulated via the gate electric field and light intensity.
Topics & Concepts
MonolayerHeterojunctionTransistorMaterials scienceVacancy defectOptoelectronicsSemiconductorField-effect transistorElectric fieldElectronNanotechnologyCondensed matter physicsVoltageElectrical engineeringPhysicsEngineeringQuantum mechanics2D Materials and ApplicationsGraphene research and applicationsMXene and MAX Phase Materials