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High-Performance, Vacuum-Free, and Self-Powered CsPbIBr<sub>2</sub> Photodetectors Boosted by Ultra-Wide-Bandgap Ga<sub>2</sub>O<sub>3</sub> Interlayer

Zeyulin Zhang, Wentao Zhang, Qubo Jiang, Ziming Wei, Yuting Zhang, Hai Long You, Minyu Deng, Weidong Zhu, Jincheng Zhang, Chunfu Zhang, Yue Hao

2020IEEE Electron Device Letters20 citationsDOI

Abstract

In this letter, ultra-wide-bandgap Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> as the interlayer is grown by mist chemical vapor deposition (mist-CVD) between perovskite and TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> electron transport layer in perovskite photodetectors (PDs). To get a stable working condition and low-cost fabrication, all-inorganic CsPbIBr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> is adopted and the expensive vacuum-deposited metal electrode is replaced by printing carbon paste. The vacuum-free, self-powered CsPbIBr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> PD with Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interlayer achieves an obviously improved performance, with a low dark current of 4.15 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-9</sup> A, high responsibility of 0.22 A/W, fast response time of 1.83μs, and high peak specific detectivity of 1.83×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> Jones. This work provides a strategy to develop high-performance self-powered PDs with the ultra-wide-bandgap Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interlayer and a reduced cost.

Topics & Concepts

PhysicsMaterials sciencePerovskite Materials and ApplicationsGa2O3 and related materialsGaN-based semiconductor devices and materials