Improved switching stability in SiNx-based RRAM by introducing nitride insertion layer with high conductivity
Yintang Yang, Yiwei Duan, Haixia Gao, Mengyi Qian, Jingshu Guo, Mei Yang, Xiaohua Ma
Abstract
In this Letter, a Pt/SiNx/TiN/Ta resistive random access memory (RRAM) is proposed, which has low switching voltage, uniform resistance distribution, excellent cycle-to-cycle stability, and excellent nonvolatile performance. As an insertion layer, TiN prevents excessive absorption of nitrogen ions by a Ta electrode and avoids the formation of the unstable metal–semiconductor interface, which significantly reduces cycle-to-cycle variability of SiNx-based RRAM. Due to high conductivity, the TiN layer has a small voltage divider effect when voltage was applied, which helps to achieve low power consumption characteristics. This paper provides a direction for improving performance of nitride-based RRAM, which is useful for further development of highly reliable RRAM.