Local Electronic Properties of Coherent Single-Layer WS<sub>2</sub>/WSe<sub>2</sub> Lateral Heterostructures
Charlotte Herbig, Canxun Zhang, Fauzia Mujid, Saien Xie, Zahra Pedramrazi, Jiwoong Park, Michael F. Crommie
Abstract
. By mapping the tunneling differential conductance across the interface, we find type-II band alignment and an ultranarrow electronic transition region only ∼3 nm in width that arises from wave function mixing between the two materials.
Topics & Concepts
HeterojunctionQuantum tunnellingScanning tunneling microscopeMaterials scienceOptoelectronicsCondensed matter physicsBand gapLayer (electronics)NanotechnologyPhysics2D Materials and ApplicationsGraphene research and applicationsMXene and MAX Phase Materials