Multiscale modeling of semimetal contact to two-dimensional transition metal dichalcogenide semiconductor
Tong Wu, Jing Guo
Abstract
A multiscale simulation approach is developed to simulate the contact transport properties between semimetal and a monolayer two-dimensional transition metal dichalcogenide (TMDC) semiconductor. The results elucidate the mechanisms for low contact resistance between semimetal and TMDC semiconductor contacts from a quantum transport perspective. The simulation results compare favorably with recent experiments. Furthermore, the results show that the contact resistance of a bismuth-MoS2 contact can be further reduced by engineering the dielectric environment and doping the TMDC material to <100 Ω·μm. The quantum transport simulation indicates the possibility to achieve an ultrashort contact transfer length of ∼1 nm, which can allow aggressive scaling of the contact size.