A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm
Junjie Li, Junjie Li, Yongliang Li, Na Zhou, Guilei Wang, Qingzhu Zhang, Anyan Du, Yongkui Zhang, Jianfeng Gao, Zhenzhen Kong, Hongxiao Lin, Jinjuan Xiang, Chen Li, Xiaogen Yin, Yangyang Li, Xiaolei Wang, Hong Yang, Xueli Ma, Jianghao Han, Jing Zhang, Tairan Hu, Tao Yang, Junfeng Li, Junfeng Li, Huaxiang Yin, Huilong Zhu, Wenwu Wang, Henry H. Radamson
Abstract
Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.