Projected performance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes
Yu-Cheng Lu, Jing‐Kai Huang, Kai-Yuan Chao, Lain‐Jong Li, Vita Pi‐Ho Hu
Topics & Concepts
RangingStatic random-access memoryElectronic circuitMaterials scienceOptoelectronicsNanotechnologyComputer scienceElectronic engineeringElectrical engineeringTelecommunicationsEngineeringSemiconductor materials and devicesFerroelectric and Negative Capacitance DevicesNanowire Synthesis and Applications