Study on the structural, optical and electrical properties of N-doped Ga2O3 films synthesized by sol-gel method
Qian Zhang, Jinxiang Deng, Ruoxi Li, Xiangyu Meng, Lina Hu, Jie Luo, Long Kong, Lingkun Meng, Juan Du, А. V. Аlmaev, Hongli Gao, Qiongqiong Yang, G.S. Wang, Junhua Meng, Xuelin Wang, Xuelin Yang, J.Y. Wang
Abstract
Ga 2 O 3 exhibits great potential for applications in solar-blind ultraviolet photo detector, high-power electronic devices and solid-state light-emitting due to its ultra-wide band gap and high Baliga figure of merit. Here, Ga 2 (N x O 1-x ) 3 films with varied nitrogen contents were prepared by the sol-gel technique. XRD analysis reveals that nitrogen doping contributes for growth of greater crystalline and SEM-EDS measurements confirm that the monoclinic crystal structure of Ga 2 (N x O 1-x ) 3 is maintained to doping level of 3.26wt%; FTIR information indicates that nitrogen prefers to substitute for the O 1 and O 2 site of Ga 2 O 3 ; XPS offers evidence that nitrogen tends to occupy oxygen vacancies and generate more gallium vacancies; UV-VIS shows that impurity defects appear above valence band , and the absorption position undergoes a red shift with nitrogen above 1.32wt%; PL shows Ga 2 (N x O 1-x ) 3 films can emit light of various colors under excitation at 325nm, and the acceptor level is at 1.63eV∼2eV above the valence band; The conductivity of Ga 2 (N x O 1-x ) 3 films is changed from n-type to p-type when nitrogen-doping is 0.96 wt% and the I–V curve composed of Ga 2 (N x O 1-x ) 3 and Ga 2 O 3 shows PDCR = 43 under the 254nm light. Therefore, the development of nitrogen-doped β-Ga 2 O 3 has potential opportunities for applications in photoelectric devices .