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Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain

Ken Kudara, Masakazu Arai, Yukiko Suzuki, Aoi Morishita, Jun Tsunoda, Atsushi Hiraiwa, Hiroshi Kawarada

2021Carbon23 citationsDOI

Topics & Concepts

DiamondOhmic contactContact resistanceOptoelectronicsChemical vapor depositionMaterials scienceCurrent densityField-effect transistorDopingTransistorLayer (electronics)VoltageNanotechnologyElectrical engineeringComposite materialPhysicsQuantum mechanicsEngineeringDiamond and Carbon-based Materials ResearchMetal and Thin Film MechanicsSemiconductor materials and devices
Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain | Litcius