Sulfur redox mediator for low-temperature flexible amorphous oxide CMOS electronics
Mingyang Wang, Taoyu Zou, Youjin Reo, Yong‐Sung Kim, Min Gyu Kim, Min-Woo Choi, Yongyoung Park, Kiyeon Yang, Young Jae Kang, Huihui Zhu, Yong‐Young Noh, Ao Liu
Abstract
Amorphous p-type oxides are essential for next-generation flexible and scalable complementary metal-oxide semiconductor (CMOS) technologies. Among emerging candidates, tellurium-based oxides (Te-TeO x ) show great promise due to their unique Te-Te conduction networks embedded within the amorphous TeO 2 matrix. However, controlled formation of these conduction channels remains challenging, limiting both hole transport and dopability under low thermal budgets. Here, we report a sulfur-mediated redox strategy that modulates the local bonding environment via TeO 2 dissociation and partial Te 4+ reduction, promoting formation of short-chain Te-Te networks. This enables high-performance p-channel thin-film transistors processed at an ultralow temperature of 120°C, exhibiting an average hole mobility of 11.5 cm 2 V −1 s −1 and on/off current ratios around 10 6 with high uniformity and reproducibility. Integration with n-type counterparts enables all-oxide CMOS circuits on both flexible and rigid substrates, including inverters with gain up to 1694, ring oscillators operating at 339 kHz, and large-scale functional circuits with rail-to-rail output.