4H-SiC trench filling by chemical vapor deposition using trichlorosilane as Si-species precursor
Zhifei Zhao, Yun Li, Yi Wang, Ping Zhou, Zhonghui Li, Ping Han
Topics & Concepts
TrichlorosilaneTrenchChemical vapor depositionMaterials scienceVoid (composites)Deposition (geology)Chemical engineeringNanotechnologyChemistryAnalytical Chemistry (journal)Composite materialOptoelectronicsSiliconGeologyEnvironmental chemistryEngineeringPaleontologySedimentLayer (electronics)Silicon Carbide Semiconductor TechnologiesCopper Interconnects and ReliabilitySemiconductor materials and devices