Tunable asymmetric magnetoresistance in an Fe<sub>3</sub>GeTe<sub>2</sub>/graphite/Fe<sub>3</sub>GeTe<sub>2</sub> lateral spin valve
Xiangyu Zeng, Ge Ye, Fazhi Yang, Qikai Ye, Liang Zhang, Boyang Ma, Yulu Liu, Yulu Liu, Mengwei Xie, Yan Liu, Yan Liu, Xiaozhi Wang, Yue Hao, Genquan Han
Abstract
growth of an FGT oxide layer on FGT. This study elucidates the device physics and mechanism of property modulation in lateral spin valves and holds the potential for advancing the development of gate-tunable spintronic devices and next-generation integrated circuits.
Topics & Concepts
SpintronicsFerromagnetismCondensed matter physicsMaterials sciencevan der Waals forceMagnetoresistanceAntiferromagnetismGraphiteTunnel magnetoresistancePhysicsMagnetic fieldMoleculeQuantum mechanicsComposite material2D Materials and ApplicationsGraphene research and applicationsHeusler alloys: electronic and magnetic properties