High-Bandwidth Green Semipolar (20–21) InGaN/GaN Micro Light-Emitting Diodes for Visible Light Communication
Sung‐Wen Huang Chen, Yu-Ming Huang, Yun-Han Chang, Yue Lin, Fang-Jyun Liou, Yu-Chien Hsu, Jie Song, Joowon Choi, Chi‐Wai Chow, Chien‐Chung Lin, Ray‐Hua Horng, Zhong Chen, Jung Han, Tingzhu Wu, Hao‐Chung Kuo
Abstract
The light-emitting diode (LED) is among promising candidates of light sources in visible light communication (VLC); however, strong internal polarization fields in common c-plane LEDs, especially green LEDs, result in low frequency and limited transmission performance. This study aims to overcome the limited 3-dB bandwidth of long-wavelength InGaN/GaN LEDs. Thus, semipolar (20–21) micro-LEDs (μLEDs) were fabricated through several improved approaches on epitaxy and chip processes. The μLED exhibits a 525 nm peak wavelength and good polarization performance. The highest 3-dB bandwidth up to 756 MHz and 1.5 Gbit/s data rate was achieved under a current density of 2.0 kA/cm2. These results suggest a good transmission capacity of green semipolar (20–21) μLEDs in VLC applications.