Amorphous gallium oxide (a-Ga <sub>2</sub> O <sub>3</sub> )-based high-temperature bendable solar-blind ultraviolet photodetector
Lingxing Xiong, Lei Zhang, Qipu Lv, Tao Li, Wenqing Song, Jiawei Si, Wenhui Zhu, Liancheng Wang
Abstract
Abstract A bendable and thermally stable solar-blind ultraviolet (UV) photodetector has been demonstrated based on Ni/amorphous Ga 2 O 3 (a-Ga 2 O 3 )/a-AlN/Cu foil structure. Here, Cu foil can simultaneously act as a bendable substrate and withstand a high-temperature environment. The ultra-wide bandgap a-AlN insulating layer can withstand mechanical tensile stress and effectively act as an insulating layer between a-Ga 2 O 3 and Cu. Thus, the a-Ga 2 O 3 -based photodetector shows stable UV response characteristics with different bending radii and temperatures. The photodetector has high responsivity of 0.518 A W −1 and a fast response time of 0.17 s under 200 °C temperature with a 1.46 cm bending radius. With exceptional bendability and thermal stability, this a-Ga 2 O 3 -based photodetector has potential applications in harsh environments such as high-power bendable electron devices, flame detection, etc.