Anomalously persistent p-type behavior of WSe<sub>2</sub> field-effect transistors by oxidized edge-induced Fermi-level pinning
Tien Dat Ngo, Min Sup Choi, Myeong‐jin Lee, Fida Ali, Won Jong Yoo
Abstract
Strong Fermi-level pinning is observed in WSe 2 devices with edge contacts due to the presence of an oxide layer at the etched interface.
Topics & Concepts
Materials scienceEnhanced Data Rates for GSM EvolutionCondensed matter physicsFermi levelField-effect transistorType (biology)Field (mathematics)TransistorPhysicsQuantum mechanicsElectronVoltageMathematicsComputer sciencePure mathematicsBiologyTelecommunicationsEcology2D Materials and ApplicationsMXene and MAX Phase MaterialsAdvanced Thermoelectric Materials and Devices