Effects of rubidium substitution of Cs2−xRbxAgBiBr6 double halide perovskites on resistive switching characteristics for memory applications
Uijin Jung, Jeongah Lim, Sang‐Min Kim, Jinsub Park
Topics & Concepts
HalideRubidiumMaterials scienceX-ray photoelectron spectroscopySubstitution (logic)Grain sizeResistive touchscreenOptoelectronicsAnalytical Chemistry (journal)ChemistryChemical engineeringInorganic chemistryComposite materialPotassiumElectrical engineeringMetallurgyComputer scienceEngineeringProgramming languageChromatographyPerovskite Materials and ApplicationsAdvanced Memory and Neural ComputingTransition Metal Oxide Nanomaterials