High-quality AlGaN epitaxy on lattice-engineerable AlN template for high-power UVC light-emitting diodes
Sebastian Walde, Cheng-Yao Huang, Chia‐Lung Tsai, W.C. Hsieh, Yi‐Keng Fu, Sylvia Hagedorn, Hung‐Wei Yen, Tien‐Chang Lu, M. Weyers, Chia‐Yen Huang
Topics & Concepts
Materials scienceOptoelectronicsDislocationDiodeLight-emitting diodeEpitaxyLattice constantLayer (electronics)Composite materialDiffractionOpticsPhysicsGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties