Noise characteristics of Ni/GaN Schottky barrier IMPATT diode based on polar- and nonpolar-oriented wurtzite GaN for terahertz application
Xiao-Yu Zhang, Lin‐An Yang, Yao Ma, Yuchen Liu, Wen-Lu Yang, Xiaohua Ma, Yue Hao
Topics & Concepts
Wurtzite crystal structureIMPATT diodeMaterials scienceOptoelectronicsTerahertz radiationDiodeSchottky diodeSchottky barrierNoise (video)Gallium nitrideZincNanotechnologyLayer (electronics)Computer scienceImage (mathematics)MetallurgyArtificial intelligenceGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesSuperconducting and THz Device Technology