High-throughput fabrication of large-scale metasurfaces using electron-beam lithography with SU-8 gratings for multilevel security printing
You Sin Tan, Hao Wang, Hongtao Wang, Chengfeng Pan, Joel K. W. Yang
Abstract
The field of metasurface research has rapidly developed in the past decade. Electron-beam lithography (EBL) is an excellent tool used for rapid prototyping of metasurfaces. However, Gaussian-beam EBL generally struggles with low throughput. In conjunction with the recent rise of interest in metasurfaces made of low-index dielectric materials, we propose in this study the use of a relatively unexplored chemically amplified resist, SU-8 with EBL, as a method for rapid prototyping of low-index metasurfaces. We demonstrate the use of SU-8 grating on silicon for cost-efficient fabrication of an all-dielectric multilevel security print for anti-counterfeiting purposes, which encrypt different optical information with different light illumination conditions, namely, bright-field reflection, dark-field reflection, and cross-polarized reflection. The large-scale print (1 mm 2 ) could be exposed in a relatively short time (∼11 min ) due to the ultrahigh sensitivity of the resist, while the feature size of ∼200 nm was maintained, demonstrating that SU-8 EBL resist serves as a good candidate for rapid prototyping of metasurface designs. Our results could find applications in the general area of increasing EBL patterning speed for a variety of other devices and structures.