Characterization of Type I/II g-C<sub>3</sub>N<sub>4</sub>/MoS<sub>2</sub> van der Waals Heterostructures: A New Theoretical Insight
Xin Wang, Jing Ma, Jianhua Fan, Hui Zhu, Xingman Liu, Hongqiang Xia, Ying-Tao Liu
Abstract
The charge transfer mechanism of the g-C 3 N 4 /MoS 2 heterojunction is still disputed. Some regard it as a type I pathway, some regard it as a type II pathway, and still some regard it as a Z-scheme pathway. Especially, the results obtained by density functional theory (DFT) calculations are not totally in agreement. Here, we constructed four g-C 3 N 4 /MoS 2 heterojunctions on the basis of the aperture alignment modes of g-C 3 N 4 and MoS 2 . Their morphology and photocatalytic activity were investigated via first-principles and excited state dynamics simulations. By systemically comparing the interfacial binding energy and electronic structure (e.g., band structure, electrostatic potential, and band edge positions) of g-C 3 N 4 /MoS 2 heterojunctions, we found that both type I and type II band alignment structures could be obtained. Moreover, the calculated lifetimes of interlayer photogenerated electrons and holes show that type II g-C 3 N 4 /MoS 2 tends to favor a general type II pathway rather than a Z-scheme pathway. This study could provide a deep understanding of the photocatalytic mechanism of g-C 3 N 4 /MoS 2 van der Waals heterostructures, which will be of great use for applications in photocatalysis.