Continuous Operation of a Half-Bridge with Multi-Parallel GaN Power Devices for Increased Current Capability
Takashi Sawada, Hiroshi Tadano, Koji Shiozaki, Takanori Isobe
Abstract
GaN power devices improve the performance in power conversion circuits. Since the current rating of the GaN devices is still small, many devices must be connected in parallel to create a large-current power module. Device cooling and low stray inductance are the major challenges in designing a high-power half-bridge circuit with multi-parallel GaN devices. In order to overcome these challenges, we propose an inverter circuit structure with 12 parallel GaN devices capable of double-sided cooling and a well-balanced stray inductance. Such a system is applicable to electric vehicle design.
Topics & Concepts
InductanceElectronic circuitPower (physics)Power semiconductor deviceComputer sciencePower moduleElectrical engineeringInverterHalf bridgeElectronic engineeringVoltageEngineeringPhysicsQuantum mechanicsSilicon Carbide Semiconductor TechnologiesAdvanced DC-DC ConvertersMultilevel Inverters and Converters