High-mobility In and Ga co-doped ZnO nanowires for high-performance transistors and ultraviolet photodetectors
Fangzhou Li, You Meng, Xiaolin Kang, SenPo Yip, Xiuming Bu, Heng Zhang, Johnny C. Ho
Abstract
and a fast response time down to 0.32 s. Highly-ordered NW parallel array thin-film transistors and photodetectors are also constructed to demonstrate the promising potential of the NWs for high-performance device applications.
Topics & Concepts
Materials sciencePhotodetectorUltravioletDopingNanowireOptoelectronicsTransistorElectron mobilityNanotechnologyElectrical engineeringVoltageEngineeringZnO doping and propertiesGa2O3 and related materialsGas Sensing Nanomaterials and Sensors