Oxygen partial pressure effects on nickel oxide thin films and NiO/Si diode performance
Thi Kim Hang Pham, Bao Quan Tran, Khac Binh Nguyen, Ngoc Yen Nhi Pham, Nguyễn Thị Hải Yến, Hoang Nga Nguyen, Ngoc Phuong Nguyen, Hai Dang Ngo, Hoai Phương Pham
Abstract
The RF-magnetron sputtering was used to create NiO x thin films on glass and n-type Si substrates; the effects of oxygen on the properties are examined. The p-nickel oxide/n-Si diode showed optimal diode characteristic at 30% oxygen gas ratio.
Topics & Concepts
Non-blocking I/ONickel oxidePartial pressureMaterials scienceNickelOxygenDiodeThin filmOxideOptoelectronicsMetallurgyNanotechnologyChemistryCatalysisBiochemistryOrganic chemistryTransition Metal Oxide NanomaterialsSemiconductor materials and devicesZnO doping and properties