Efficient Inorganic Vapor‐Assisted Defects Passivation for Perovskite Solar Module
Kun Zhang, Yang Wang, Mingquan Tao, Lutong Guo, Yongrui Yang, Jiang‐Yang Shao, Yanyan Zhang, Fuyi Wang, Yanlin Song
Abstract
Abstract Surface trap as intrinsic defects‐mediated non‐radiative charge recombination is a major obstacle to achieving the reliable fabrication of high‐efficiency and large‐area perovskite photovoltaics. Here a CS 2 vapor‐assisted passivation strategy is proposed for perovskite solar module, aiming to passivate the iodine vacancy and uncoordinated Pb 2+ caused by ion migration. Significantly, this method can avoid the disadvantages of inhomogeneity film caused by spin‐coating‐assisted passivation and reconstruction of perovskite surface from solvent. The CS 2 vapor passivated perovskite device presents a higher defect formation energy (0.54 eV) of iodine vacancy than the pristine (0.37 eV), while uncoordinated Pb 2+ is bonded with CS 2 . The shallow level defect passivation of iodine vacancy and uncoordinated Pb 2+ has obviously enhanced the device efficiencies (25.20% for 0.08 cm 2 and 20.66% for 40.6 cm 2 ) and the stability, exhibiting an average T 80 ‐lifetime of 1040 h working at the maximum power point, and maintaining over 90% of initial efficiency after 2000 h at RH = 30% and 30 °C.