Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films
Darshika Sanjay Khone, Sandeep Kumar, Mohammad Balal, S. R. Barman, Sunil Kumar, Abhimanyu Rana
Abstract
Abstract Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta 2 O 5 ) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 85% in the full visible region and showed RS behavior and battery-like IV characteristics. The overall characteristics of RS can be tuned using the top electrode and the thickness of a-Ta 2 O 5 . Thinner films showed a conventional RS behavior, while thicker films with metal electrodes showed a battery-like characteristic, which could be explained by additional redox reactions and non-Faradaic capacitive effects. Devices having battery-like IV characteristics showed higher enhanced, retention and low-operation current.