A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET
Wei-Xiang You, Pin Su, Chenming Hu
Abstract
This paper proposes a new 8T nonvolatile SRAM (nvSRAM) cell employing ULP FinFETs and ferroelectric FinFETs to enable energy-efficient and low-latency store/recall operations. Different from other types of nvSRAM requiring additional circuitry or nonvolatile memories connected to a standard 6T SRAM cell to achieve nonvolatility, the proposed hybrid nvSRAM cell reduces the area penalty by embedding the nonvolatile ferroelectric FinFETs in a 6T SRAM cell without sacrificing the cell stability, read/write performance and power consumption.
Topics & Concepts
Non-volatile memoryStatic random-access memoryPower consumptionComputer scienceRandom access memoryLatency (audio)FerroelectricityElectronic engineeringEnergy consumptionMemory cellFerroelectric RAMElectrical engineeringEmbedded systemMaterials scienceTransistorPower (physics)Computer hardwareOptoelectronicsEngineeringVoltageTelecommunicationsQuantum mechanicsPhysicsDielectricFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvanced Memory and Neural Computing