Optical Multilevel Spin Bit Device Using Chiral Quantum Dots
Hammam Al‐Bustami, Brian P. Bloom, Amir Ziv, S. Goldring, Shira Yochelis, Ron Naaman, David H. Waldeck, Yossi Paltiel
Abstract
The technological advancement of data storage is reliant upon the continuous development of faster and denser memory with low power consumption. Recent progress in flash memory has focused on increasing the number of bits per cell to increase information density. In this work an optical multilevel spin bit, based on the chiral induced spin selectivity (CISS) effect, is developed using nanometer sized chiral quantum dots. A double quantum dot architecture is adsorbed on the active area of a Ni based Hall sensor and a nine-state readout is achieved.
Topics & Concepts
Quantum dotFlash memorySpin (aerodynamics)Quantum sensorFlash (photography)OptoelectronicsNanotechnologyNanometrePower consumptionMaterials sciencePhysicsQuantum entanglementQuantumPower (physics)Quantum networkQuantum mechanicsComputer scienceOpticsComputer hardwareThermodynamicsQuantum and electron transport phenomenaMagnetic properties of thin filmsSemiconductor Quantum Structures and Devices