Scratching lithography for wafer-scale MoS<sub>2</sub> monolayers
Wei Zheng, Mengzhou Liao, Yutuo Guo, Jian Tang, Yongqing Cai, Hanyang Chen, Qinqin Wang, Qi Jia, Ying Lü, Yanchong Zhao, Jieying Liu, Yanbang Chu, Hua Yu, Na Li, Jiahao Yuan, Biying Huang, Cheng Shen, Rong Yang, Dongxia Shi, Guangyu Zhang
Abstract
Abstract Monolayer MoS 2 is an emerging two-dimensional (2D) semiconductor with promise on novel electronics and optoelectronics. Standard micro-fabrication techniques such as lithography and etching are usually involved to pattern such materials for devices but usually face great challenges on yielding clean structures without edge, surface and interface contaminations induced during the fabrication process. Here a direct writing patterning approach for wafer-scale MoS 2 monolayers is reported. By controllable scratching by a tip, wafer-scale monolayer MoS 2 films on various substrates are patterned in an ultra-clean manner. MoS 2 field effect transistors fabricated from this scratching lithography show excellent performances, evidenced from a room-temperature on–off ratio exceeding 10 10 and a high field-effect mobility of 50.7 cm 2 V −1 s −1 , due to the cleanness of as-fabricated devices. Such scratching approach can be also applied to other 2D materials, thus providing an alternate patterning strategy to 2D-materials based devices.