Carbon-dot doped, transfer-free, low-temperature, high mobility graphene using microwave plasma CVD
Ashmi Mewada, Riteshkumar Vishwakarma, Rucheng Zhu, Masayoshi Umeno
Abstract
post-doping. The novelty of this work is in the use of carbon dots for the metal-free doping of graphene. To understand the doping mechanism, the carbon dots were mixed with various solvents and spin coated on graphene with simultaneous exposure to a laser. The significant information observed was that the electron or hole transfer to graphene depends upon the functional group attached to the carbon dot surface. Carbon dots were synthesized using the simple hydrothermal method and characterized with transmission electron microscopy revealing carbon dots in the range of 5-10 nm diameter. Doped graphene samples were further analyzed using Raman microscopy and Hall effect measurements for their electronic properties. This work can open an opportunity for growing graphene directly on silicon substrates with improved mobility using microwave plasma CVD for various electronic applications.