Physical Unclonable Functions Based on Transient Form of Memristors for Emergency Defenses
Jing Sun, Zhan Wang, Saisai Wang, Mei Yang, Haixia Gao, Hong Wang, Xiaohua Ma, Yue Hao
Abstract
In this letter, transient form of diffusive memristors with cross-point structure of W/Ag/MgO/Ag/W for physical unclonable functions (PUF) were proposed for the first time. The stochastic dispersion of Ag in MgO switching layer made the randomness maximized, which achieved an inter-chip Hamming distance of 49.1%. Importantly, triggered failure of the transient PUF devices was activated in deionized water at room temperature after 3 min immersion. Additionally, the transient PUF devices were transferred onto flexible polyimide substrate by water-assisted transfer printing method without any bits flipped, which achieved physical disappearance in deionized water finally. This transient form of memristor provides powerful insights into next-generation PUF design and hardware security for emergency defenses.