Impact of External Magnetic Fields on STT-MRAM: An Application Note
B. Diény, S. Aggarwal, V. B. Naik, Sébastien Couet, Thomas Coughlin, Shunsuke Fukami, Kévin Garello, Jack Guedj, Jean Anne C. Incorvia, Laurent Lebrun, Kyung‐Jin Lee, Daniele Leonelli, Yonghwan Noh, Siamak Salimy, Steven Soss, L. Thomas, Weigang Wang, D. C. Worledge
Abstract
This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic fields and the typical magnitudes of magnetic fields are given.
Topics & Concepts
Magnetoresistive random-access memoryMagnetic fieldComputer sciencePhysicsRandom access memoryComputer hardwareQuantum mechanicsNuclear Physics and ApplicationsNon-Destructive Testing TechniquesMagnetic properties of thin films