Low Temperature Wafer Level Hybrid Bonding Enabled by Advanced SiCN and Surface Activation
Fumihiro Inoue, Atsushi Nagata, Junya Fuse, Sodai Ebiko, Ryosuke Sato, Kenichi Saitô, Yoshihiro Kondo, Takuo Kawauchi, Junghwan Park, Chiwoo Ahn, Myeonghyeon Kim, Jiho Kang
Abstract
Dielectric layer of hybrid bonding is one of the most critical materials for the yield and reliability because it is the majority of the bonding surface/interface. This paper demonstrates 300mm wafer bonding using SiCN and optimized plasma activation, where the bond strength is high at low temperatures (250°C). A new method to measure bond strength accurately is used to understand how the bonding process works. By carefully characterizing the SiCN and plasma conditions, we achieved similar bond strength at both high and low temperatures, opening doors for low-temperature hybrid bonding applications.