Theoretical understanding of the in-plane tensile strain effects on enhancing the ferroelectric performance of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> and ZrO<sub>2</sub> thin films
Kun Hee Ye, Tae-Young Jeong, Seungjae Yoon, Dohyun Kim, Cheol Seong Hwang, Jung‐Hae Choi
Abstract
The strain effects on the phase fractions and polarization in Hf 0.5 Zr 0.5 O 2 and ZrO 2 were investigated. Under tensile strain at low temperatures, the ferroelectric phase was stabilized, while the formation of other phases was kinetically inhibited.
Topics & Concepts
Materials scienceFerroelectricityTensile strainUltimate tensile strengthComposite materialOptoelectronicsDielectricFerroelectric and Negative Capacitance DevicesMXene and MAX Phase MaterialsSemiconductor materials and devices