Solution-based <i>in situ</i> deposition of Sb<sub>2</sub>S<sub>3</sub> from a single source precursor for resistive random-access memory devices
Sayali Shrishail Harke, Tongjun Zhang, Ruomeng Huang, Chitra Gurnani
Abstract
A one-step, scalable, reproducible, low-temperature, and in situ solvothermal deposition method has been established for the growth of Sb 2 S 3 on FTO using [Sb{S 2 P{O(Pr) 2 } 3 ] precursor. The Ag/Sb 2 S 3 /FTO device demonstrated low operating voltage and excellent resistive switching characteristics.
Topics & Concepts
Resistive random-access memoryIn situResistive touchscreenDeposition (geology)Materials scienceScalabilityAntimonyAnalytical Chemistry (journal)OptoelectronicsElectrodeNanotechnologyChemistryComputer scienceMetallurgyPhysical chemistryOrganic chemistrySedimentComputer visionPaleontologyChromatographyBiologyDatabaseAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesPerovskite Materials and Applications