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C-Si interface on SiO2/(1 1 1) diamond p-MOSFETs with high mobility and excellent normally-off operation

Xiaohua Zhu, Te Bi, Xiaolu Yuan, Yuhao Chang, Runming Zhang, Yu Fu, Juping Tu, Yabo Huang, Jinlong Liu, Chengming Li, Hiroshi Kawarada

2022Applied Surface Science29 citationsDOI

Topics & Concepts

Materials scienceX-ray photoelectron spectroscopyHigh-resolution transmission electron microscopyDiamondOptoelectronicsElectron mobilitySiliconAnnealing (glass)Threshold voltageMOSFETField-effect transistorAnalytical Chemistry (journal)SemiconductorField electron emissionTransistorTransmission electron microscopyNanotechnologyElectronVoltageElectrical engineeringChemistryNuclear magnetic resonanceChromatographyQuantum mechanicsComposite materialPhysicsEngineeringDiamond and Carbon-based Materials ResearchSemiconductor materials and devicesMetal and Thin Film Mechanics
C-Si interface on SiO2/(1 1 1) diamond p-MOSFETs with high mobility and excellent normally-off operation | Litcius