Controlled growth of SiC crystals in combustion synthesis
Fei Li, Wei Cui, Zhaobo Tian, Jie Zhang, Songmo Du, Zhanglin Chen, Kexin Chen, Guanghua Liu
Abstract
Abstract β‐SiC powders with different particle morphologies were prepared by combustion synthesis in an N 2 atmosphere, with carbon black, carbon fiber, graphene, and graphite as carbon sources. With carbon black as the carbon source, single‐phase β‐SiC nanopowder with an average particle size around 20 nm was obtained. From carbon fiber and graphene, SiC fibers and sheets were produced, which were polycrystalline and consisted of lots of nanocrystals with random orientations. It was proposed that the synthesis of SiC occurs by gas–solid reaction and the growth of SiC is confined to the carbon particles. In the controlled growth of SiC, the morphology of the precursor carbon is preserved, offering an opportunity to control the particle morphology of SiC by changing carbon sources.