A Temperature-Dependent <i>dV<sub>CE</sub>/dt</i> Model for Field-Stop IGBT at Turn-Off Transient
Peng Xue, Pooya Davari
Abstract
In this article, an analytical model is proposed to model collector–emitter voltage rising slope ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$dV_{\text {CE}}/dt$ </tex-math></inline-formula> ) of field-stop insulated gate bipolar transistor (FS IGBT) during the turn-off transient. Thanks to TCAD simulation, the internal physics of the FS IGBT during <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\text {CE}}$ </tex-math></inline-formula> rise transient is investigated. Based on the improved understanding of the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\text {CE}}$ </tex-math></inline-formula> rise transient, an analytical solution of the excess carrier distribution in the N-base region and field-stop (FS) layer is derived. An analytical model for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$dV_{\text {CE}}/dt$ </tex-math></inline-formula> of FS IGBT is also proposed. The temperature dependency of various silicon material and device parameters is included in the model. In the end, the double-pulse tests are performed on 650-V/40-A and 1200-V/40-A FS IGBTs. The test results are compared with the analytical predictions and good agreement is obtained.