An FR4-Based <i>K</i>-Band 1.0-dB Noise Figure LNA Using SISL Technology
Jin Zhang, Kaixue Ma, Yongqiang Wang, Keping Wang
Abstract
This letter presents an ultralow noise <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$K$ </tex-math></inline-formula> -band low-noise amplifier (LNA) using substrate integrated suspended line (SISL) technology. A simplified, purely distributed parameter matching network is utilized for simultaneous noise and impedance matching. Different from standard chip-level circuits, a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$K$ </tex-math></inline-formula> -band LNA based on board-level platform with low-cost FR4 is proposed. Using the high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> value of the SISL platform, this LNA shows the advantages of high-power gain, ultralow noise, and self-packaging. According to the measurement, the proposed LNA achieves a 27.7-dB small signal gain with 2.4-GHz 3-dB bandwidth (25–27.4 GHz) and noise figure (NF) of 1.0 dB with 20-mW power dissipation.