Engineering Titanium Dioxide/Titanocene-Polysulfide Interface for Flexible, Optical-Modulated, and Thermal-Tolerant Multilevel Memristor
Pan‐Ke Zhou, Xi Lin, Yiqun Gao, Xiaoli Lin, Tao Zeng, Hao‐Hong Li, Xiong Chen, Huidong Zheng
Abstract
Multifunctional memristors with a high memory density, low power consumption, flexibility, programmability, and environmental robustness are essential for next-generation memories. In this work, a titanocene-polysulfide complex (Cp 2 TiS 5 ) with strong S···S interactions and hydrogen bonds was synthesized and integrated with TiO 2 to create a novel Cu/TiO 2 /Cp 2 TiS 5 /Ag memristor. This device shows bipolar nonvolatile memory performance with a remarkable ON/OFF ratio (10 4.8 ), low switching voltages ( V SET, −0.16 V; V RESET, +0.15 V), and low power consumption (2.7 × 10 –4 μW). It exhibits multilevel memory behavior, flexibility, optical modulation ( V SET decreases from −1.35 to −0.17 V with decreasing irradiation wavelength), and thermal tolerance (up to 200 °C). The electron-rich Cp 2 TiS 5 layer protects the Ag-CFs, while TiO 2 ’s oxygen vacancies and unsaturated Ti atoms interact with sulfur from Cp 2 TiS 5, lowering the Schottky barrier and facilitating charge transport. This work offers promising opportunities in flexible memristive devices for neuromorphic computing under extreme conditions.