Litcius/Paper detail

Impact of doping concentration and recess depth to achieve enhancement mode operation in β-Ga2O3 MOSFET

Roshan Sharma, Akash Patnaik, Pankaj Sharma, Pankaj Sharma

2023Microelectronics Journal18 citationsDOI

Topics & Concepts

Materials scienceDopingMOSFETBreakdown voltageThreshold voltagePassivationOptoelectronicsVoltageDrain-induced barrier loweringPower MOSFETPower semiconductor deviceChannel length modulationElectrical engineeringTransistorNanotechnologyLayer (electronics)EngineeringGa2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques
Impact of doping concentration and recess depth to achieve enhancement mode operation in β-Ga2O3 MOSFET | Litcius