Extending the coherence of spin defects in hBN enables advanced qubit control and quantum sensing
Roberto Rizzato, Martin Schalk, Stephan Mohr, Jens C. Hermann, Joachim P. Leibold, Fleming Bruckmaier, Giovanna Salvitti, Chenjiang Qian, Peirui Ji, G. V. Astakhov, Ulrich Kentsch, M. Helm, Andreas V. Stier, Jonathan J. Finley, Dominik B. Bucher
Abstract
Abstract Negatively-charged boron vacancy centers ( $${{V}_{B}}^{-}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msup> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi>V</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>B</mml:mi> </mml:mrow> </mml:msub> </mml:mrow> <mml:mrow> <mml:mo>−</mml:mo> </mml:mrow> </mml:msup> </mml:math> ) in hexagonal Boron Nitride (hBN) are attracting increasing interest since they represent optically-addressable qubits in a van der Waals material. In particular, these spin defects have shown promise as sensors for temperature, pressure, and static magnetic fields. However, their short spin coherence time limits their scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by two orders of magnitude, approaching the fundamental T 1 relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect radiofrequency signals with sub-Hz resolution. The corresponding sensitivity is benchmarked against that of state-of-the-art NV-diamond quantum sensors. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures.