Improved Reversibility of Thin-Film Solid Oxide Cells at 500 °C by Tailoring Sputtering Processes for Depositing Yttria-Stabilized Zirconia Electrolyte
Sanghoon Lee, Wonjong Yu, Yujae Jang, Sangbong Ryu, Jaewon Hwang, Gu Young Cho, Dong‐Gyu Ahn, Suk Won
Abstract
The present study investigates the impact of sputtering configurations on the microstructure and crystallinity of thin-film yttria-stabilized zirconia electrolytes for anodized aluminum oxide-supported all-sputtered thin-film reversible solid oxide cells. Employing various sputtering parameters, such as target-substrate distance and substrate rotation speed, the present study reveals distinct surface characteristics and crystalline structures of thin-film yttria-stabilized zirconia. The microstructure analysis includes scanning electron microscopy and atomic force microscopy examinations, uncovering the influence of the process parameters on the surface morphology, roughness, and grain size. X-ray diffraction data illustrate the texture preferences and crystallite characteristics. The electrochemical characterization of the reversible solid oxide cells demonstrates that the optimized sputtering configuration significantly outperforms the others in both SOFC and SOEC modes, showing exceptional current densities of 964 mA/cm 2 at 1.3 V in electrolysis mode at 500 °C. Electrochemical impedance spectroscopy further reveals improved charge transfer reactions at the interface of the electrolyte. The enhanced electrochemical performance is attributed to the unique microstructure and crystallinity of the thin film of yttria-stabilized zirconia. The record-breaking electrolysis performance of this work at 500 °C underscores the potential of tailored sputtering parameters in optimizing the reversible solid oxide cell performance.