Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x = 2.0–2.5) films
Jamal Aziz, Honggyun Kim, Shania Rehman, Ji‐Hyun Hur, Yun‐Heub Song, Muhammad Farooq Khan, Deok‐kee Kim
Topics & Concepts
Materials scienceStoichiometryRaman spectroscopyOxygenSputteringX-ray photoelectron spectroscopyTungstenAnalytical Chemistry (journal)NiobiumElectrodePhase (matter)Layer (electronics)Threshold voltageThin filmOptoelectronicsChemical engineeringNanotechnologyChemistryVoltagePhysical chemistryMetallurgyEngineeringQuantum mechanicsOpticsOrganic chemistryChromatographyPhysicsTransistorAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesTransition Metal Oxide Nanomaterials