Double Gate Double-Channel AlGaN/GaN MOS HEMT and its Applications to LNA with Sub-1 dB Noise Figure
Mahdi Vadizadeh, Mohammad Fallahnejad, Maryam Shaveisi, Reyhaneh Ejlali, Farshad Bajelan
Topics & Concepts
High-electron-mobility transistorTransconductanceNoise figureMaterials scienceOptoelectronicsTransistorNoise (video)AmplifierLow-noise amplifierElectrical engineeringVoltageComputer scienceCMOSEngineeringImage (mathematics)Artificial intelligenceGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignSemiconductor Quantum Structures and Devices