Thickness effect on the ferroelectric properties of La-doped HfO<sub>2</sub> epitaxial films down to 4.5 nm
Tingfeng Song, Romain Bachelet, Guillaume Saint‐Girons, N. Dix, Ignasi Fina, F. Sánchez
Abstract
Epitaxial La:HfO 2 films of less than 7 nm have a high remanent polarization of about 30 μC cm −2 , and show slight wake-up, endurance of at least 10 10 cycles and retention of more than 10 years, with both latter properties measured at the same poling voltage.
Topics & Concepts
Materials scienceEpitaxyFerroelectricityPolingDopingPolarization (electrochemistry)OptoelectronicsCondensed matter physicsAnalytical Chemistry (journal)Composite materialLayer (electronics)DielectricPhysical chemistryChemistryPhysicsChromatographyFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase Materials