Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework
Grigorii Skorupskii, Géraldine Chanteux, Khoa N. Le, Ivo Stassen, Christopher H. Hendon, Mircea Dincă
Abstract
Abstract Metal–organic frameworks (MOFs) are hybrid materials known for their nanoscale pores, which give them high surface areas but generally lead to poor electrical conductivity. Recently, MOFs with high electrical conductivity were established as promising materials for a variety of applications in energy storage and catalysis. Many recent reports investigating the fundamentals of charge transport in these materials focus on the role of the organic ligands. Less consideration, however, is given to the metal ion forming the MOF, which is almost exclusively a late first‐row transition metal. Here, we report a moderately conductive porous MOF based on trivalent gallium and 2,3,6,7,10,11‐hexahydroxytriphenylene. Gallium, a metal that has not been featured in electrically conductive MOFs so far, has a closed‐shell electronic configuration and is present in its trivalent state—in contrast to most conductive MOFs, which are formed by open‐shell, divalent transition metals. Our material, made without using any harmful solvents, displays conductivities on the level of 3 mS/cm and a surface area of 196 m 2 /g, comparable to transition metal analogs.