Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET
Soohyun Kim, Jungchun Kim, Doyoung Jang, R. Ritzenthaler, Bertrand Parvais, Jérôme Mitard, Hans Mertens, T. Chiarella, Naoto Horiguchi, Jae Wook Lee
Abstract
The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of temperatures (25–125 °C). A similar temperature dependence of threshold voltage (VTH) and subthreshold swing (SS) is observed for both devices. However, effective mobility (μeff) shows significant differences of temperature dependence between GAA NW-FET and FinFET at a high gate effective field. At weak Ninv (= 5 × 1012 cm2/V∙s), both GAA NW-FET and FinFET are mainly limited by phonon scattering in μeff. On the other hand, at strong Ninv (= 1.5 × 1013 cm2/V∙s), GAA NW-FET shows 10 times higher dμeff/dT and 1.6 times smaller mobility degradation coefficient (α) than FinFET. GAA NW-FET is less limited by surface roughness scattering, but FinFET is relatively more limited by surface roughness scattering in carrier transport.